Nexperia's GROUNDBREAKING Half Bridge Tech at APEC 2025!

We visit Nexperia at APEC 2025 to dive into the cutting-edge tech they’re showcasing. Jim walks us through two exciting demos: 🔹 A 650V GaN Half-Bridge using Next Power’s 8x8 DFN GaN FETs (80mΩ) — hard switching at 11MHz with no sweat, thanks to tight layout and low-inductance design. 🔹 A 3-Phase Motor Drive demo using 100V FETs (3.2mΩ per switch in parallel), running at 50kHz switching frequency, co-developed with NXP and targeting industrial and automotive applications. We talk about key design considerations like minimizing loop inductance and getting the most performance out of GaN technology without turning your power stage into an RF oscillator.