GaN Power Breakthrough: The Future Beyond Silicon and SiC

Now shipping: 900 V GaN devices
Scaling target: 100–200 kW and beyond
Low power (&lt; 30 W): silicon preferred

Gallium Nitride (GaN) is quickly proving itself as the next big leap in high-voltage power technology. Unlike silicon carbide (SiC), GaN delivers similar performance advantages at a fraction of the cost—and it’s only getting better.

In this video, we explore why GaN is fundamentally superior for high-voltage switching, how one company is already shipping 900-volt GaN devices, and why this unique device structure opens the door to even higher voltages without the typical design challenges.

While SiC remains limited by cost, GaN is pushing into new power ranges—potentially 100–200 kW+—setting the stage to replace both SiC and traditional IGBTs. For lower-power applications under 30 W, silicon still dominates, but from there on up, GaN is taking over.