ROHM Introduces Low-Loss 650V IGBTs for Automotive and Industrial Systems

ROHM has introduced a new generation of 650V insulated-gate bipolar transistors designed to improve efficiency and reliability in automotive auxiliary systems and industrial equipment.

The fourth-generation devices target applications including electric vehicle compressors, high-voltage heaters, and industrial inverters. These systems need efficient power switching but must also tolerate the electrical stress caused by short circuits and other abnormal operating conditions.

ROHM says the new IGBTs achieve class-leading low conduction loss, with a typical collector-emitter saturation voltage as low as 1.55V. The company redesigned the device’s internal and edge-termination structures to increase current density while reducing both conduction and switching losses.

Importantly, that efficiency does not come at the expense of short-circuit performance. The devices provide a short-circuit withstand time of seven microseconds at a junction temperature of 25°C, giving protection circuitry time to detect and interrupt an overcurrent event. The automotive-grade products also comply with the AEC-Q101 reliability standard.

The initial lineup consists of 12 products in the through-hole TO-247N package and 10 bare-wafer products. ROHM is also developing 12 versions in the four-lead TO-247-4L package, with compact surface-mount and top-side-cooled options planned for the future.

SPICE and PLECS models are available to help engineers evaluate the devices and integrate them into circuit designs.

By combining low power loss with strong short-circuit tolerance, ROHM’s latest EcoIGBT devices could help engineers create smaller and more energy-efficient automotive and industrial power systems.