Nexperi Demonstrates High-Frequency GaN Motor Drive and SiC Evaluation Platforms

Nexperia Demonstrates High-Frequency GaN Motor Drive and SiC Evaluation Platforms at APEC 2026

At APEC 2026, Bryan DeLuca stopped by the Nexperia to see the company’s latest wide bandgap power solutions, including a high-frequency GaN motor drive and silicon carbide (SiC) evaluation platforms.

One of the highlights was a 48V, three-phase motor drive built using 100V GaN FETs. Developed in collaboration with NXP, the system demonstrates switching frequencies up to 100 kHz—significantly higher than the typical 20 kHz range.

By increasing switching speed, engineers can achieve improved motor efficiency and higher system bandwidth. This is especially important in applications like high-performance servo systems, where precise control and fast response times are critical.

The design uses parallel 100V GaN FETs with ultra-low on-resistance, enabling efficient high-speed switching while maintaining performance.

In addition to GaN, Nexperia also showcased 1200V silicon carbide MOSFETs using their packaging for topside cooling. The accompanying evaluation boards support double-pulse testing and feature low-inductance layouts with integrated current sensing.

These platforms allow engineers to accurately evaluate switching performance and validate real-world behavior, with the same setups used for device characterization in datasheets.

A key takeaway for engineers designing with wide bandgap devices is the importance of minimizing inductance. Efficient layouts with tight current loops help reduce losses and fully leverage the performance advantages of GaN and SiC technologies.

To learn more, visit: https://www.nexperia.com/